Transistors

0-24V TOP MOSFET BUTTON IRF520 MOS DRIVER MODULE

0-24V TOP MOSFET BUTTON IRF520 MOS DRIVER MODULE

DescriptionIRF520 MOSFET, gate can be adjusted via PWM outputAllows Arduino to drive up to 24V loads, such as LED strips, DC motor, micro pump and solenoid valvesVoltage: 3.3V/5VInterface: digital lev..

3.00 JOD
2222a transistor
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2222a transistor

DATASHEET..

0.10 JOD 0.15 JOD
3904 transistor

3904 transistor

DATASHEET..

0.15 JOD
3906 transistor

3906 transistor

DATASHEET..

0.15 JOD
BC547 NPN GENERAL PURPOSE TRANSISTOR 45V 0.1A

BC547 NPN GENERAL PURPOSE TRANSISTOR 45V 0.1A

BC547 As SwitchIn A Switch, It Is Operated In The Saturation And Cut-Off Region. A Transistor Acts As An Open Switch During Forwarding And As A Closed Switch During Reverse Bias, This Biasing Can Only..

0.15 JOD
BC557 PNP EPITAXIAL SILICON TRANSISTOR

BC557 PNP EPITAXIAL SILICON TRANSISTOR

Type Designator: BC557Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.3 WMaximum Collector-Base Voltage |Vcb|: 50 VMaximum Collector-Emitter Voltage |Vce|: 45 VMaxim..

0.15 JOD
BPW77NA PHOTOTRANSISTOR NPN

BPW77NA PHOTOTRANSISTOR NPN

Descriptionis a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO­18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensibl..

3.50 JOD
IGBT

IGBT

IGBT k50t60datasheet..

5.00 JOD
IRF3205PBF N-MOS Transistor 110 V, 55 A, TO-220

IRF3205PBF N-MOS Transistor 110 V, 55 A, TO-220

Type Designator: IRF3205PBFType of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage |Vds|: 55 VMaximum Gate-Source Voltage |Vgs|: ..

1.50 JOD
IRF540 MOSFET N-CHANNEL 33A 100V

IRF540 MOSFET N-CHANNEL 33A 100V

Type Designator: IRF540Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 150 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 20 ..

2.00 JOD
IRF630N N-MOSFET 200V 9.3A

IRF630N N-MOSFET 200V 9.3A

Features:N-Kanal-TypVDS = 200 VID = 93 APtot = 82 WRDS(ON) = 030 WDatasheet..

2.00 JOD
IRF9540N P-CHANNEL POWER MOSFET

IRF9540N P-CHANNEL POWER MOSFET

Type Designator: IRF9540NType of Transistor: MOSFETType of Control Channel: P -ChannelMaximum Power Dissipation (Pd): 140 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 1..

2.50 JOD
IRFZ34N N-MOSFET 55V 26A

IRFZ34N N-MOSFET 55V 26A

IRFZ34N MOSFET transistorType: n-channelDrain-to-Source Breakdown Voltage: 55 VGate-to-Source Voltage, max: ±20 VDrain-Source On-State Resistance, max: 40.000 OhmContinuo..

2.00 JOD
IRFZ44 N-CHANNEL MOSFET 49A 55V

IRFZ44 N-CHANNEL MOSFET 49A 55V

Type Designator: IRFZ44Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 150 WMaximum Drain-Source Voltage |Vds|: 60 VMaximum Drain Current |Id|: 35 AMaximum..

2.00 JOD
N-CHANNEL IGBT TRANSISTOR 14A 600V HGT1S7N60C3D

N-CHANNEL IGBT TRANSISTOR 14A 600V HGT1S7N60C3D

DescriptionUFS N-Channel IGBT TransistorThe HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss ..

3.00 JOD
NPN Darlington POWER TRANS. 100V 8A TIP102

NPN Darlington POWER TRANS. 100V 8A TIP102

Material of Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 80 WMaximum Collector-Base Voltage |Vcb|: 100 VMaximum Collector-Emitter Voltage |Vce|: 100 VMaximum Emitter-Base Volta..

2.00 JOD
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