Transistors
0-24V TOP MOSFET BUTTON IRF520 MOS DRIVER MODULE
DescriptionIRF520 MOSFET, gate can be adjusted via PWM outputAllows Arduino to drive up to 24V loads, such as LED strips, DC motor, micro pump and solenoid valvesVoltage: 3.3V/5VInterface: digital lev..
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BC547 NPN GENERAL PURPOSE TRANSISTOR 45V 0.1A
BC547 As SwitchIn A Switch, It Is Operated In The Saturation And Cut-Off Region. A Transistor Acts As An Open Switch During Forwarding And As A Closed Switch During Reverse Bias, This Biasing Can Only..
BC557 PNP EPITAXIAL SILICON TRANSISTOR
Type Designator: BC557Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.3 WMaximum Collector-Base Voltage |Vcb|: 50 VMaximum Collector-Emitter Voltage |Vce|: 45 VMaxim..
BPW77NA PHOTOTRANSISTOR NPN
Descriptionis a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensibl..
IRF3205PBF N-MOS Transistor 110 V, 55 A, TO-220
Type Designator: IRF3205PBFType of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage |Vds|: 55 VMaximum Gate-Source Voltage |Vgs|: ..
IRF540 MOSFET N-CHANNEL 33A 100V
Type Designator: IRF540Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 150 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 20 ..
IRF630N N-MOSFET 200V 9.3A
Features:N-Kanal-TypVDS = 200 VID = 93 APtot = 82 WRDS(ON) = 030 WDatasheet..
IRF9540N P-CHANNEL POWER MOSFET
Type Designator: IRF9540NType of Transistor: MOSFETType of Control Channel: P -ChannelMaximum Power Dissipation (Pd): 140 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 1..
IRFZ34N N-MOSFET 55V 26A
IRFZ34N MOSFET transistorType: n-channelDrain-to-Source Breakdown Voltage: 55 VGate-to-Source Voltage, max: ±20 VDrain-Source On-State Resistance, max: 40.000 OhmContinuo..
IRFZ44 N-CHANNEL MOSFET 49A 55V
Type Designator: IRFZ44Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 150 WMaximum Drain-Source Voltage |Vds|: 60 VMaximum Drain Current |Id|: 35 AMaximum..
N-CHANNEL IGBT TRANSISTOR 14A 600V HGT1S7N60C3D
DescriptionUFS N-Channel IGBT TransistorThe HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss ..
NPN Darlington POWER TRANS. 100V 8A TIP102
Material of Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 80 WMaximum Collector-Base Voltage |Vcb|: 100 VMaximum Collector-Emitter Voltage |Vce|: 100 VMaximum Emitter-Base Volta..