N-CHANNEL IGBT TRANSISTOR 14A 600V HGT1S7N60C3D

N-CHANNEL IGBT TRANSISTOR 14A 600V HGT1S7N60C3D

Product Code:transistor
Availability:Out Of Stock
  • 3.00 JOD


Description

UFS N-Channel IGBT Transistor

The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor.

Features:
- 14A, 600V at TC = 25°C
- 600V Switching SOA Capability
- Typical Fall Time: 140ns @ TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode

Maximum Ratings
Collector-Emitter Voltage: 600V
Collector Current Continuous
- At TC = 25°C: 14A
- At TC = 110°C: 7A
Average Diode Forward Current at 110°C: 8A
Collector Current Pulsed: 56A
Gate-Emitter Voltage Continuous: ±20V
Gate-Emitter Voltage Pulsed: ±30V
Switching Safe Operating Area at TJ = 150°C: 40A @ 480V
Power Dissipation Total at TC = 25°C: 60W
- Derating TC > 25°C: 0.487W/°C
Operating and Storage Junction Temperature Range: -40° to 150°C
Short Circuit Withstand Time @ VGE = 15V: 1us
Short Circuit Withstand Time @ VGE = 10V: 8us

Applications:
- AC and DC Motor Controls
- Power Supplies and Drivers for Solenoids
- Relays and Contactors




Datasheet

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